JSMSEMI · Transistors (BJTs) · MPN PDTA114ET,215-JSM
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| Current - Collector Cutoff | - |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| Transition frequency(fT) | 250MHz |
| DC Current Gain | 30 |
| Emitter-Base Voltage VEBO | - |
| Current - Collector(Ic) | 50mA |
| Vce Saturation(VCE(sat)) | - |
| Operating Temperature | -55℃~+150℃ |
| Output Voltage(VO(on)) | 300mV@10mA,0.5mA |
| Input Resistor | 13kΩ |
| Resistor Ratio | 1.2 |
| Pd - Power Dissipation | 200mW |
50V 30 50mA 200mW PNP 1 PNP Pre-Biased SOT-23 Single, Pre-Biased Bipolar Transistors RoHS