JSMSEMI · Transistors (BJTs) · MPN PBSS4160T,215-JSM
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 150MHz |
| Collector - Emitter Voltage VCEO | 60V |
| DC Current Gain | 100 |
| Emitter-Base Voltage VEBO | 5V |
| Pd - Power Dissipation | 725mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 1A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 280mV |
60V 100 1 NPN NPN 1A SOT-23 Single Bipolar Transistors RoHS