JSMSEMI P0803BDG-JSM

JSMSEMI · FETs & Power MOSFETs · MPN P0803BDG-JSM

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)33.7nC@10V
Output Capacitance(Coss)245pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation46W
Reverse Transfer Capacitance (Crss@Vds)215pF
RDS(on)12mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.614nF
TypeN-Channel

Technical details

30V 80A 2.5V 46W 12mΩ@4.5V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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