JSMSEMI · FETs & Power MOSFETs · MPN NVD5803NT4G-JSM
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| Gate Charge(Qg) | 75nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 120W |
| Reverse Transfer Capacitance (Crss@Vds) | 380pF |
| RDS(on) | 4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.4nF |
| Type | N-Channel |
40V 120A 2.5V 120W 4mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS