JSMSEMI · FETs & Power MOSFETs · MPN NVD2955T4G-JSM
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| Gate Charge(Qg) | 11.8nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 31.3W |
| RDS(on) | 132mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
| Type | P-Channel |
60V 13A 2.5V 31.3W 132mΩ@4.5V 1 P-Channel P-Channel TO-252-2 Single FETs, MOSFETs RoHS