JSMSEMI NTF2955T1G

JSMSEMI · FETs & Power MOSFETs · MPN NTF2955T1G

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)4.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)170mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)930pF

Technical details

P-Channel 60V 4.3A 3.1W Surface Mount SOT-223

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