JSMSEMI · FETs & Power MOSFETs · MPN NTD5867NLT4G-JSM
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 17nC@10V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 45mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 670pF |
| Type | N-Channel |
60V 35A 3V 100W 45mΩ@4.5V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS