JSMSEMI NDT3055

JSMSEMI · FETs & Power MOSFETs · MPN NDT3055

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)10nC@10V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)80mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)240pF

Technical details

N-Channel 60V 3A 1.25W Surface Mount SOT-223

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