JSMSEMI NCE60P04Y-JSM

JSMSEMI · FETs & Power MOSFETs · MPN NCE60P04Y-JSM

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)22.6nC@10V
Output Capacitance(Coss)95pF
Current - Continuous Drain(Id)4.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)165mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.135nF
TypeP-Channel

Technical details

60V 4.3A 3V 3W 165mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS

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