JSMSEMI · Transistors (BJTs) · MPN MMBTH10
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 650MHz |
| Collector - Emitter Voltage VCEO | 25V |
| Emitter-Base Voltage VEBO | 3V |
| DC Current Gain | 60 |
| Pd - Power Dissipation | 350mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 50mA |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 500mV |
Bipolar (BJT) Transistor NPN 25V 50mA 650MHz 350mW Surface Mount SOT-23