JSMSEMI MMBT5401

JSMSEMI · Transistors (BJTs) · MPN MMBT5401

No reviews yet — be the first to review JSMSEMI MMBT5401.

Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO150V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation225mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor 150V 500mA 100MHz 225mW Surface Mount SOT-23

Related Transistors (BJTs)