JSMSEMI MMBT2222A

JSMSEMI · Transistors (BJTs) · MPN MMBT2222A

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Specifications

Current - Collector Cutoff10nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO6V
DC Current Gain300
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)350mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 20V 350mA 300MHz 300mW Surface Mount SOT-23

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