JSMSEMI MJD41CRLG

JSMSEMI · Transistors (BJTs) · MPN MJD41CRLG

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain15
Pd - Power Dissipation20W
Number1 NPN
typeNPN
Current - Collector(Ic)6A
Vce Saturation(VCE(sat))1.5V
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 100V 6A 3MHz 20W Surface Mount TO-252

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