JSMSEMI · Transistors (BJTs) · MPN MJ11032G-JSM
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| Vbe Saturation(VBE(sat)) | 4.5V |
|---|---|
| Current - Collector Cutoff | - |
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 120V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 18000 |
| Pd - Power Dissipation | 300W |
| type | NPN |
| Current - Collector(Ic) | 50A |
| Vce Saturation(VCE(sat)) | 3.5V@50A,500mA |
| Operating Temperature | - |
120V 18000 NPN 50A TO-3 Single Bipolar Transistors RoHS