JSMSEMI MCT06P10-TP

JSMSEMI · FETs & Power MOSFETs · MPN MCT06P10-TP

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Specifications

Gate Charge(Qg)40nC@4.5V
Drain to Source Voltage100V
Current - Continuous Drain(Id)6A
Output Capacitance(Coss)170pF
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)90pF
Number1 P-Channel
Input Capacitance(Ciss)2.5nF
TypeP-Channel

Technical details

P-Channel 100V 6A 3.1W Surface Mount SOT-223

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