JSMSEMI JSM50N06D

JSMSEMI · FETs & Power MOSFETs · MPN JSM50N06D

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Specifications

Gate Charge(Qg)167nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)525pF
RDS(on)15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.1nF

Technical details

N-Channel 60V 50A 300W Surface Mount TO-252

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