JSMSEMI JSM100N06D

JSMSEMI · FETs & Power MOSFETs · MPN JSM100N06D

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)29nC@10V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)331.4pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation87W
RDS(on)4.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)10.5pF
Number1 N-channel
Input Capacitance(Ciss)2.135nF
TypeN-Channel

Technical details

60V 100A 2.5V 87W 4.7mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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