JSMSEMI JSM100N03D

JSMSEMI · FETs & Power MOSFETs · MPN JSM100N03D

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Specifications

Gate Charge(Qg)41nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation105W
Reverse Transfer Capacitance (Crss@Vds)221pF
RDS(on)6.4mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.963nF

Technical details

N-Channel 30V 90A 105W Surface Mount TO-252

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