JSMSEMI · FETs & Power MOSFETs · MPN IXTX110N20L2-JSM
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| Gate Charge(Qg) | 367nC@20V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 900W |
| RDS(on) | 23mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 561pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.784nF |
200V 110A 900W Through Hole TO-247