JSMSEMI IXTQ96N20P-JSM

JSMSEMI · FETs & Power MOSFETs · MPN IXTQ96N20P-JSM

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Specifications

Gate Charge(Qg)367nC@10V
Drain to Source Voltage220V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation700W
Reverse Transfer Capacitance (Crss@Vds)561pF
RDS(on)25mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.784nF

Technical details

N-Channel 220V 100A 700W Through Hole TO-247

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