JSMSEMI · FETs & Power MOSFETs · MPN IXTQ82N25P-JSM
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| Gate Charge(Qg) | 367nC@20V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 85A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 600W |
| Reverse Transfer Capacitance (Crss@Vds) | 561pF |
| RDS(on) | 27mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.784nF |
250V 85A 600W Through Hole TO-247