JSMSEMI IXTQ60N20T-JSM

JSMSEMI · FETs & Power MOSFETs · MPN IXTQ60N20T-JSM

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Specifications

Gate Charge(Qg)244nC@10V
Drain to Source Voltage220V
Output Capacitance(Coss)657pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation500W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)45mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.538nF
TypeN-Channel

Technical details

N-Channel 220V 60A 500W Through Hole TO-247

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