JSMSEMI · FETs & Power MOSFETs · MPN IXTQ50N25T-JSM
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| Gate Charge(Qg) | 244nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 400W |
| Reverse Transfer Capacitance (Crss@Vds) | 280pF |
| RDS(on) | 30mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.538nF |
N-Channel 250V 55A 400W Through Hole TO-247