JSMSEMI IXTQ460P2-JSM

JSMSEMI · FETs & Power MOSFETs · MPN IXTQ460P2-JSM

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Specifications

Gate Charge(Qg)53.4nC
Drain to Source Voltage500V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation350W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)300mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.367nF

Technical details

500V 25A 350W Through Hole TO-247

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