JSMSEMI · FETs & Power MOSFETs · MPN IXTQ100N25P-JSM
No reviews yet — be the first to review JSMSEMI IXTQ100N25P-JSM.
| Gate Charge(Qg) | 367nC@20V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 105A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 960W |
| RDS(on) | 30mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 561pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.784nF |
N-Channel 250V 105A 960W Through Hole TO-247