JSMSEMI IXTK62N25

JSMSEMI · FETs & Power MOSFETs · MPN IXTK62N25

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Specifications

Gate Charge(Qg)367nC@20V
Drain to Source Voltage250V
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation500W
RDS(on)30mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)561pF
Number1 N-channel
Input Capacitance(Ciss)5.784nF

Technical details

N-Channel 250V 70A 500W Through Hole TO-264

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