JSMSEMI IXTH88N30P-JSM

JSMSEMI · FETs & Power MOSFETs · MPN IXTH88N30P-JSM

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Specifications

Gate Charge(Qg)367nC@20V
Drain to Source Voltage300V
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation600W
RDS(on)30mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)561pF
Number1 N-channel
Input Capacitance(Ciss)5.784nF

Technical details

N-Channel 300V 90A 600W Through Hole TO-247

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