JSMSEMI IXFH80N25X3-JSM

JSMSEMI · FETs & Power MOSFETs · MPN IXFH80N25X3-JSM

No reviews yet — be the first to review JSMSEMI IXFH80N25X3-JSM.

Specifications

Gate Charge(Qg)367nC@10V
Drain to Source Voltage250V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation400W
RDS(on)25mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)561pF
Number1 N-channel
Input Capacitance(Ciss)5.784nF

Technical details

250V 80A 400W Through Hole TO-247

Related FETs & Power MOSFETs