JSMSEMI IXFH120N20P-JSM

JSMSEMI · FETs & Power MOSFETs · MPN IXFH120N20P-JSM

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Specifications

Gate Charge(Qg)367nC@20V
Drain to Source Voltage200V
Output Capacitance(Coss)893pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation750W
Reverse Transfer Capacitance (Crss@Vds)561pF
RDS(on)23mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.784nF

Technical details

200V 120A 750W Through Hole TO-247

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