JSMSEMI IXFH10N80P

JSMSEMI · FETs & Power MOSFETs · MPN IXFH10N80P

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)58nC
Output Capacitance(Coss)230pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation240W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)2.8nF

Technical details

800V 10A 240W Through Hole TO-247

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