JSMSEMI IRFR3518TRPBF-JSM

JSMSEMI · FETs & Power MOSFETs · MPN IRFR3518TRPBF-JSM

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Specifications

Gate Charge(Qg)24.6nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation115W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)12mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.55nF

Technical details

N-Channel 100V 55A 115W Surface Mount TO-252

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