JSMSEMI IRFPE50

JSMSEMI · FETs & Power MOSFETs · MPN IRFPE50

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Specifications

Drain to Source Voltage800V
Current - Continuous Drain(Id)7.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation190W
RDS(on)1.2Ω@10V
Number1 N-channel
Vgs±20V
TypeN-Channel

Technical details

N-Channel 800V 7.8A 190W Through Hole TO-247

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