JSMSEMI IRFP4868PBF-JSM

JSMSEMI · FETs & Power MOSFETs · MPN IRFP4868PBF-JSM

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Specifications

Gate Charge(Qg)367nC@10V
Drain to Source Voltage300V
Output Capacitance(Coss)893pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation600W
Reverse Transfer Capacitance (Crss@Vds)561pF
RDS(on)35mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.784nF
TypeN-Channel

Technical details

N-Channel 300V 80A 600W Through Hole TO-247

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