JSMSEMI IRFP4229PBF-JSM

JSMSEMI · FETs & Power MOSFETs · MPN IRFP4229PBF-JSM

No reviews yet — be the first to review JSMSEMI IRFP4229PBF-JSM.

Specifications

Gate Charge(Qg)244nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation350W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)48mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.538nF
Type-

Technical details

N-Channel 250V 45A 350W Through Hole TO-247

Related FETs & Power MOSFETs