JSMSEMI IRFB5615PBF-JSM

JSMSEMI · FETs & Power MOSFETs · MPN IRFB5615PBF-JSM

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Specifications

Gate Charge(Qg)154nC@160V
Drain to Source Voltage150V
Output Capacitance(Coss)355pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation400W
Reverse Transfer Capacitance (Crss@Vds)101pF
RDS(on)40mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.8nF

Technical details

N-Channel 150V 40A 400W Through Hole TO-220-3L

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