JSMSEMI IRFB4020PBF-JSM

JSMSEMI · FETs & Power MOSFETs · MPN IRFB4020PBF-JSM

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Specifications

Gate Charge(Qg)38nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)161pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation104W
RDS(on)110mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)70pF
Number1 N-channel
Input Capacitance(Ciss)1.2nF
Type-

Technical details

N-Channel 200V 18A 104W Through Hole TO-220-3L

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