JSMSEMI IRFB3206PBF-JSM

JSMSEMI · FETs & Power MOSFETs · MPN IRFB3206PBF-JSM

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Specifications

Gate Charge(Qg)115nC@15V
Drain to Source Voltage60V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation358W
RDS(on)5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)487pF
Number1 N-channel
Input Capacitance(Ciss)2.699nF

Technical details

N-Channel 60V 120A 358W Through Hole TO-220-3L

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