JSMSEMI IRF9630PBF-JSM

JSMSEMI · FETs & Power MOSFETs · MPN IRF9630PBF-JSM

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Specifications

Configuration-
Drain to Source Voltage200V
Gate Charge(Qg)68nC@10V
Output Capacitance(Coss)370pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
RDS(on)420mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)81pF
Number1 P-Channel
Input Capacitance(Ciss)1.2nF

Technical details

P-Channel 200V 10A Through Hole TO-220

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