JSMSEMI IRF9389TR-JSM

JSMSEMI · FETs & Power MOSFETs · MPN IRF9389TR-JSM

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)15.9nC@10V
Output Capacitance(Coss)139pF
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation2W
RDS(on)52mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)94pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)759pF
TypeN-Channel + P-Channel

Technical details

30V 7.5A 2.6V 2W 52mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOP-8 Single FETs, MOSFETs RoHS

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