JSMSEMI IRF5305PBF-JSM

JSMSEMI · FETs & Power MOSFETs · MPN IRF5305PBF-JSM

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Specifications

Gate Charge(Qg)40nC@0V
Drain to Source Voltage60V
Output Capacitance(Coss)608pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)275pF
RDS(on)55mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.489nF
TypeP-Channel

Technical details

P-Channel 60V 35A 110W Through Hole TO-220-3L

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