JSMSEMI IRF3710PBF-JSM

JSMSEMI · FETs & Power MOSFETs · MPN IRF3710PBF-JSM

No reviews yet — be the first to review JSMSEMI IRF3710PBF-JSM.

Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)610pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)260pF
RDS(on)21mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.7nF
Type-

Technical details

100V 200W Through Hole TO-220-3L

Related FETs & Power MOSFETs