JSMSEMI IRF250P225-JSM

JSMSEMI · FETs & Power MOSFETs · MPN IRF250P225-JSM

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Specifications

Gate Charge(Qg)244nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)657pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation400W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)35mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.538nF

Technical details

N-Channel 250V 70A 400W Through Hole TO-247

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