JSMSEMI · FETs & Power MOSFETs · MPN IRF1010EPBF-JSM
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| Gate Charge(Qg) | 115nC@15V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 1.016nF |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 358W |
| RDS(on) | 6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 487pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.699nF |
| Type | N-Channel |
N-Channel 60V 110A 358W Through Hole TO-220