JSMSEMI · FETs & Power MOSFETs · MPN IPD50N04S4L-08-JSM
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| Gate Charge(Qg) | 46nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 220pF |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 58W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 11mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
40V 70A 58W 11mΩ@4.5V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS