JSMSEMI IPD036N04LG-JSM

JSMSEMI · FETs & Power MOSFETs · MPN IPD036N04LG-JSM

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)14nC@10V
Output Capacitance(Coss)266pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation142W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)5.7mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

40V 100A 2.5V 142W 5.7mΩ@4.5V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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