JSMSEMI HUF75631S3S-JSM

JSMSEMI · FETs & Power MOSFETs · MPN HUF75631S3S-JSM

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation130W
Reverse Transfer Capacitance (Crss@Vds)88pF
RDS(on)38mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.331nF
TypeN-Channel

Technical details

N-Channel 100V 35A 130W Surface Mount TO-263-2L

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