JSMSEMI FQPF85N06-JSM

JSMSEMI · FETs & Power MOSFETs · MPN FQPF85N06-JSM

No reviews yet — be the first to review JSMSEMI FQPF85N06-JSM.

Specifications

Drain to Source Voltage60V
Gate Charge(Qg)60nC@10V
Output Capacitance(Coss)608pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)275pF
RDS(on)15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.489nF
TypeN-Channel

Technical details

N-Channel 60V 70A 110W Through Hole TO-220-3L

Related FETs & Power MOSFETs