JSMSEMI FQPF6N80C

JSMSEMI · FETs & Power MOSFETs · MPN FQPF6N80C

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)27nC
Current - Continuous Drain(Id)7A
Output Capacitance(Coss)120pF
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)1.7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.29nF
TypeN-Channel

Technical details

N-Channel 800V 7A 48W Through Hole TO-220F

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