JSMSEMI FQP50N06

JSMSEMI · FETs & Power MOSFETs · MPN FQP50N06

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)41nC@10V
Output Capacitance(Coss)580pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation120W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)22mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.54nF

Technical details

60V 50A 120W Through Hole TO-220

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