JSMSEMI · FETs & Power MOSFETs · MPN FQD19N10TM-JSM
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 13nC@10V |
| Output Capacitance(Coss) | 700pF |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 55W |
| RDS(on) | 70mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.15nF |
| Type | N-Channel |
100V 19A 2.5V 55W 70mΩ@4.5V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS